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| ACE3413 Technology Description The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. P-Channel Enhancement Mode MOSFET Features * * * * * * * * * * * * * -20V/-3.4A, RDS(ON)=95m@VGS=-4.5V -20V/-2.4A, RDS(ON)=120m@VGS=-2.5V -20V/-1.7A, RDS(ON)=145m@VGS=-1.8V -20V/-1.0A, RDS(ON)=210m@VGS=-1.25V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25 TA=70 TA=25 TA=70 Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RJA -20 12 -3.5 -2.8 -15 -1.4 1.25 0.8 V V A A A W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 -55/150 150 /W VER 1.2 1 ACE3413 Technology Packaging Type SOT-23-3 3 P-Channel Enhancement Mode MOSFET Pin 1 2 3 1 2 Description Gate Source Drain Ordering information Selection Guide ACE3413 XX + Pb - free BM: SOT-23-3 VER 1.2 2 ACE3413 Technology Electrical Characteristics (TA=25, Unless otherwise noted) P-Channel Enhancement Mode MOSFET Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) Gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Conditions Min. Typ Max. Unit V nA uA A S V VGS=0V, ID=-250uA -20 VDS=VGS, ID=-250uA -0.35 -0.8 VDS=0.V, VGS=12V 100 VDS=-20V, VGS=0V -1 -5 VDS=-20V, VGS=0V TJ=55 VDS-5V, VGS=-4.5V -6 VGS=-4.5V, ID=-3.4A 0.076 0.095 VGS=-2.5V, ID=-2.4A 0.097 0.120 VGS=-1.8V, ID=-1.7A 0.123 0.145 VGS=-1.25V, ID=-1.0A 0.185 0.210 VDS=-5.0V, ID=-2.8A 6 IS=-1.5A, VGS=0V -0.8 -1.2 VDS=-6V, VGS=-4.5V, ID-2.8A VDS=-6V, VGS=0V, f=1MHz VDD=-6V, RL=6 ID-1.0A, VGEN=-4.5V RG=6 4.8 1.0 1.0 485 85 40 10 13 18 15 8 nC pF 16 23 25 20 ns VER 1.2 3 ACE3413 Technology Typical Characteristics Output Characteristics Transfer Characteristics P-Channel Enhancement Mode MOSFET VDS - Drain to Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate to Source Voltage (V) Capacitance ID - Drain Current (A) VDS - Drain to Source Voltage (V) VER 1.2 4 ACE3413 Technology Typical Characteristics Gate Charge On-Resistance vs. Junction Temperature P-Channel Enhancement Mode MOSFET Oq Total Gate Charge (nC) Source-Drain Diode Forward Voltage TJ - Junction Temperature () On-Resistance vs. Gate-to-Source Voltage VSD Source to Drain Voltage (V) VGS - Gate to Source Voltage (V) VER 1.2 5 ACE3413 Technology Typical Characteristics Threshold Voltage Single Pulse Power, Junction-To-Ambient P-Channel Enhancement Mode MOSFET TJ - Temperature Normalized Thermal Transient Impedance, Junction-to-Foot Time(sec) Square Wave Pulse Duration(sec) VER 1.2 6 ACE3413 Technology Packing Information SOT-23-3 P-Channel Enhancement Mode MOSFET VER 1.2 7 ACE3413 Technology P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 8 |
Price & Availability of ACE3413
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